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The typical structure of an MBE growth chamber is depicted in Fig. 1a. In this setup, Ga, N, and Si atoms are released from their respective effusion cells and introduced into the growth chamber as molecular beams through a controlled...

Science, Volume 390, Issue 6771 , October 2025.

arXiv abstract link

Just had a mindblowing tour of Intelligent Epitaxy Technology and their giant molecular beam epitaxy (MBE) facility. Had a chance to take a picture with the largest MBE machine in the world! It was a ...

arXiv abstract link

UCL Discovery is UCL's open access repository, showcasing and providing access to UCL research outputs from all UCL disciplines.

We investigate the spin properties of InAs/InGaAs/InP quantum dots grown by metalorganic vapor-phase epitaxy (MOVPE) deposition using droplet epitaxy, which emits in the telecom C band. Using pump-pro...

arXiv abstract link

Experimental evidence demonstrates long-distance remote epitaxial interactions of thin films even through thick amorphous carbon buffer layers and shows that these can be induced through dislocations in the substrate.

Remote epitaxy has emerged as a groundbreaking technique in the realm of crystal growth, enabling the creation of single-crystalline films that can be easily integrated with various substrates. The fundamental mechanism relies on establishing an epitaxial relationship between a growing film and an underlying substrate, facilitated not through direct atomic bonding but via remote interactions. This approach opens the door to fabricating high-quality epitaxial layers that can be detached and transferred, paving the way for innovations in semiconductor technology, flexible electronics, and more.

Nature, Published online: 01 October 2025; doi:10.1038/s41586-025-09484-z Experimental evidence demonstrates long-distance remote epitaxial interactions of thin films even through thick amorphous carbon buffer layers and shows that these can be induced through dislocations in the substrate.